RF Micro Devices News http://www.rfmd.com http://blogs.law.harvard.edu/tech/rss Thu, 02 Feb 2012 11:36:32 -0600 Thu, 02 Feb 2012 11:36:12 -0600 FeedForAll Mac v2.1 (2.1.0.1); http://www.FeedForAll.com/ RFMD’s new RF6504 is a Front End Module (FEM) for 433MHz to 470MHz AMI/AMR systems. The Tx port provides a PA with nominal output power of 30dBm and gain of 15dB. The Rx passthrough port is on a separate path. Both are combined with a single antenna port and SP2T switch, all presented in a 5.5mm x 5.0mm, 28-pin package. http://www.rfmdnews.com/press/RF6504_PA/RF6504_PA.html F634775C-F1E8-4393-87B0-BC8D5B43D971-23805-000096BDE514F1A8-FFA Thu, 02 Feb 2012 11:36:26 -0600 RFMD’s new RF6514 is a Front End Module (FEM) for 470MHz to 510MHz AMR systems. It contains separate ports for Rx and Tx paths. The PA produces nominal output power of 30dBm. This FEM is presented in a 5.5mm x 5.0mm, 28-pin package. http://www.rfmdnews.com/press/RF6514_PA/RF6514_PA.html C4CFDB08-FB21-43EF-99BF-BED6E9A58B4D-23712-0000962A7AFC366B-FFA Thu, 02 Feb 2012 11:25:55 -0600 GREENSBORO, N.C., January 10, 2012 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the release of the RFFM6201, a 2.4GHz band single-chip Zigbee® front-end module (FEM) featuring an integrated power amplifier, low noise amplifier, and diversity switch. http://www.rfmdnews.com/press/ZigBeeHAN/ZigBeeHAN.html 329832D0-D835-4FE8-968E-661CADD73C43-3031-000F4D2810BF2E96-FFA Tue, 17 Jan 2012 11:08:30 -0600 RFMD’s new RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband amplifier applications. The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. http://www.rfmdnews.com/press/RF3928B_PA/RF3928B_PA.html 2DC71A30-36A6-47D3-AFCB-813C22295E63-18742-000D8249CF8813CE-FFA Wed, 11 Jan 2012 15:00:00 -0600 RFMD’s new RFSA3013 and RFSA3023 are fully monolithic analog voltage-controlled attenuators (VCAs) featuring exceptional linearity over a 30dB minimum gain control range. These VCAs also feature internal temperature compensation that provides an attenuation profile highly insensitive to temperature changes. Each VCA is controlled by a single positive control voltage with on-chip DC conditioning circuitry. The slope of the control voltage versus gain is selectable. These VCAs have been characterized for 75Ω CATV applications over the full attenuation and frequency ranges with no external matching components required. The components are offered in a compact 3mm x 3mm QFN package. http://www.rfmdnews.com/press/RFSA30x3_PA/RFSA30x3_PA.html E58D0CCB-EB9C-4713-9535-58EE79EB5001-13816-000B4AF524F72D6D-FFA Wed, 04 Jan 2012 09:44:00 -0600 GREENSBORO, N.C., December 20, 2011 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Lenovo Mobile Internet and Digital Home Business Group (MIDH) has honored RFMD® with its 2011 Best Supplier Award. Lenovo MIDH is the subsidiary of Lenovo responsible for creating mobile Internet-focused devices, including tablets and smartphones, as well as devices for new categories like cloud computing, smart TV and the digital home. http://www.rfmdnews.com/press/Lenovo/Lenovo.html 0231793F-36E7-4FBC-90C6-E01E58CD1861-28401-000977F51983B2EC-FFA Thu, 29 Dec 2011 11:06:29 -0600 Greensboro, NC, December 8, 2011 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has commenced volume production of multiple 3G/4G power amplifiers (PAs), in support of two leading smartphone families. The two most recent smartphones supported by RFMD® feature RFMD’s PowerSmart™ power platform and RFMD’s RF724x family of ultra-high efficiency power amplifiers. http://www.rfmdnews.com/press/PowersSmartphoneFamily/PowersSmartphoneFamily.html 1F6809FA-C4DD-4BC9-9B86-5CC973A5D674-32981-000529414CEAF390-FFA Thu, 15 Dec 2011 10:20:14 -0600 The RF5605 and RFFM420x family of parts (RFFM4200, RFFM4201, RFFM4202, and RFFM4203) from RFMD are 6 x 6mm high power, front end modules specifically designed for IEEE 802.11b/g/n WiFi 2.4 -2.5GHz customer premises equipment (CPE) applications. They each have an integrated three-stage linear power amplifier, Tx harmonic filtering, and SPDT switch. These modules also have a fully matched input and output for a 50Ω system and incorporate matching networks optimized for linear output power and efficiency. http://www.rfmdnews.com/press/RF5605-RFFM420x_PA/RF5605-RFFM420x.html E0945149-A5C3-497B-9305-5D46B22CF6E7-17683-0004D8036F8413FF-FFA Wed, 14 Dec 2011 09:32:09 -0600 RFMD’s new RF1293 and RF1293A Switch Filter Modules offer very low insertion loss along with excellent linearity performance and are ideal for multi-mode GSM, EDGE, LTE, and UMTS handset applications. These modules integrate low pass filtering on the GSM transmit paths, avoiding the need for external harmonic attenuation. They also integrate GSM receive bandpass filters and are compatible with +1.8V control logic. They are packaged in compact 3.2mm x 3.5mm, 21-pin module packages which allow for small solution size with no need for external DC blocking capacitors when no external DC is applied to device ports. http://www.rfmdnews.com/press/RF1293-A_PA/RF1293-A_PA.html 4E58C586-70DC-437B-894F-BA06EF3DD622-3759-00048D45C3C9C349-FFA Tue, 13 Dec 2011 10:41:55 -0600 RFMD’s new RFFM3482E Front End Module (FEM) is a single-chip integrated FEM for high-performance WiFi applications in the 2.4GHz to 2.5GHz ISM band. It addresses the need for aggressive size reduction for typical 802.11b/g/n front end designs and greatly reduces the number of components outside of the core chipset. RFFM3482E has an integrated b/g/n power amplifier, directional power detector, Rx balun, and Tx filtering. It is also capable of switching between WiFi Rx, WiFi Tx, and Bluetooth Rx/Tx operations. In a 3mmx3mmx0.45mm, 16-pin package, this module meets or exceeds the RF front end needs of 802.11b/g/n WiFi RF systems. http://www.rfmdnews.com/press/RFFM3482E_PA/RFFM3482E_PA.html B48217AE-134C-43FE-9A15-491947B78E4E-5012-000274DEBA29B857-FFA Tue, 06 Dec 2011 14:52:38 -0600 RFMD’s new RFSA4013 and RFSA4023 are fully monolithic analog Temperature-Compensating Attenuators (TCAs) featuring exceptional linearity over their entire gain control range. These TCAs are designed to offset the gain reduction of an RF component over temperature without the need for closed loop feedback. Three customer selectable temperature coefficients make these TCAs a flexible solution for RF lineups. Each attenuator incorporates revolutionary new circuit architecture that solves a longstanding industry problem with regards to attenuator architecture: high IP3, low DC current, and broad bandwidth. Traditional approaches for linear temperature-compensating devices require expensive co-fired ceramics with temperature-sensitive materials or current-hungry PIN diodes with elaborate area consuming control circuits. The RFSA4013 and RFSA4023 only require a single supply voltage and two logic bits to set the control attenuation slope versus temperature. Each TCA draws a very low 1mA current and is packaged in a small 3mmx3mm QFN. These attenuators are internally matched to 50Ω over their rated control range and frequency. http://www.rfmdnews.com/press/RFSA4013-23_PA/RFSA4013-23_PA.html C2296360-1A63-4C1C-AB49-0E548B4BB0BD-45986-00012FEEAFC28663-FFA Fri, 02 Dec 2011 11:38:15 -0600 RFMD’s new RF1604D is a single-pole four-throw (SP4T) switch designed for Receive Diversity switching applications. The RF1604D is ideally suited for battery-operated applications requiring high performance switching with very low DC power consumption. It features very low insertion loss and is optimized for diversity routing with 1.3V GPIO control voltage compatibility. Additionally, RF1604D includes integrated decoding logic, allowing just two control lines needed for switch control. The RF1604D is packaged in a very compact 2.5mm x 2.5mm x 0.6mm, 12-pin, leadless QFN package. No DC-blocking capacitors are required on RF paths unless DC is applied externally to the device ports. http://www.rfmdnews.com/press/RF1604D_PA/RF1604D_PA.html 58BD819D-E0DD-4001-BB4A-60C745FB5452-87947-000CE1843FFA4785-FFA Tue, 22 Nov 2011 10:09:30 -0600 RFMD’s new RF6555 integrates a complete solution in a single Front End Module (FEM) for ZigBee® and Wi-Fi applications in the 2.4GHz to 2.5GHz band. This FEM integrates the PA plus harmonic filter in the transmit path and an internally integrated LNA with bypass mode. The RF6555 provides a single balanced TDD access for Rx and Tx paths along with two ports on the output for connecting a diversity solution or a test port. The RF6555 also has current consumption for ZigBee applications enabling extended battery life with only 70mA at rated power. http://www.rfmdnews.com/press/RF6555_PA/RF6555_PA.html 7DE1960E-82C2-4FCB-969C-3CE4ABA03577-2019-000B200C351CBEE0-FFA Wed, 16 Nov 2011 16:53:02 -0600 The RFCA8818 is a push-pull amplifier aimed at CATV MDU, drop amplifier, and line amplifier applications. Operating from a single power supply and containing internal input and output matching, the part provides 17dB gain and +34dBmV output power, and features low noise performance of 2dB. http://www.rfmdnews.com/press/RFCA8818_PA/RFCA8818_PA.html 407D28F0-FB2F-4A35-9D6B-97A84CD96198-9469-000932C97FD96F92-FFA Thu, 10 Nov 2011 10:14:21 -0600 Greensboro, NC, November 3, 2011 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Huawei Technologies Corp., Ltd., a leading global information and communications technology (ICT) solutions provider, has honored RFMD with Huawei’s 2011 “Best Supplier Award.” The prestigious award was accepted by RFMD’s president and CEO, Bob Bruggeworth, at an awards ceremony held earlier today in Shenzhen, China. http://www.rfmdnews.com/press/HuaweiHonors/HuaweiHonors.html E1A433D4-B809-420D-8219-E4933C7E2826-97530-0008F501A8051AF6-FFA Wed, 09 Nov 2011 15:22:16 -0600 The RFAM2790 is an integrated EDGE QAM Amplifier Module employing a GaAs pHEMT die, a GaAs MESFET die, a 20dB range Variable Attenuator, and a Power Enable feature. It provides high output power, excellent linearity, and superior return loss performance with low noise and optimal reliability. http://www.rfmdnews.com/press/RFAM2790_PA/RFAM2790_PA.html F17E6289-51A3-4FF6-B512-BB4E60AC91AF-94029-0008E3C3AF097F19-FFA Wed, 09 Nov 2011 10:06:30 -0600 RFMD’s new RFPP2870 SOT115J push-pull amplifier features 28dB minimum gain at 1003MHz, with excellent distortion characteristics and optimal reliability. The part employs GaN HEMT, GaAs MESFET, and GaAs pHEMT die and operates from 40MHz to 1003MHz. http://www.rfmdnews.com/press/RFPP2870_PA/RFPP2870_PA.html 9B004D5B-19FC-4A02-A415-D487E1A8793D-80016-00089A98F2680116-FFA Tue, 08 Nov 2011 11:45:32 -0600 The RF6650 is a pulse-width modulated (PWM), voltage-mode controlled DC-DC converter unit designed to supply power to W-CDMA power amplifiers. The output voltage is continuously programmable through the VSET analog input pin. The converter has been optimized for high efficiency at light current load conditions, fast transient response times to meet W-CDMA 25µs slot-to-slot transition specifications, and low noise by maintaining a constant switching frequency, while supplying up to 650mA in PWM-controlled or bypass modes. http://www.rfmdnews.com/press/RF6650_PA/RF6650_PA.html 3A0D1DC0-B5FD-49FD-A618-28674F35B780-75376-00066BC00093C169-FFA Tue, 01 Nov 2011 10:05:02 -0500 RFMD’s RFHA1000 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design. This GaN discrete amplifier is 50Ω input-matched, and packaged in a small form factor 5x6mm SOIC-8 outline air cavity ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of an optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. http://www.rfmdnews.com/press/RFHA1000_PA/RFHA1000_PA.html CB4EDAD2-21D6-4C0A-A444-E28E284CB1BC-62745-0006229B7DCA86E5-FFA Mon, 31 Oct 2011 11:44:43 -0500 RFMD’s RFHA1003 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design. This GaN discrete amplifier are 50Ω input-matched packaged in a small form factor 5x6mm SOIC-8 outline air cavity ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. http://www.rfmdnews.com/press/RFHA1003_PA/RFHA1003_PA.html 8FCF31DA-74C3-409B-B869-7A519AB79612-9383-0004EE91C6C7A8DE-FFA Thu, 27 Oct 2011 13:40:08 -0500 RFMD’s new RF3826 is a wideband Power Amplifier designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. http://www.rfmdnews.com/press/RF3826_PA/RF3826_PA.html 0ABF7B8A-FC61-4847-B8ED-73DA6FC712FB-79572-0004484F5D6863BC-FFA Tue, 25 Oct 2011 10:53:31 -0500 The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. http://www.rfmdnews.com/press/RF3928_PA/RF3928_PA.html C160BB6A-16F0-459F-9071-34763C01D273-4969-00027F9D16CBBBE5-FFA Wed, 19 Oct 2011 15:24:47 -0500 Greensboro, N.C., October 4, 2011 –RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced a strategic initiative to extend RFMD’s industry leadership in compound semiconductor technologies into a broad array of adjacent non-RF growth markets. The strategic initiative includes the formation of a new business group, the Compound Semiconductor Group (CSG), which will operate alongside RFMD’s Cellular Products Group (CPG) and RFMD’s Multi-Market Products Group (MPG). RFMD forecasts the total available market (TAM) for non-RF applications addressed by CSG will exceed $1.5 billion in calendar 2015. http://www.rfmdnews.com/press/SemiconductorGroup/SemiconductorGroup.html 6C7D80CF-49DD-4E1B-ACE8-AE80ADDC4468-68088-0003ED4CC23D28F1-FFA Tue, 11 Oct 2011 10:38:34 -0500 Greensboro, N.C., July 19, 2011- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced its Foundry Services business unit has expanded its portfolio of process technologies to include two additional GaAs process technologies – RFMD’s FD25 low noise pHEMT process and RFMD’s FET1H switching pHEMT process. The two additional GaAs pHEMT process technologies are available immediately to foundry customers. http://www.rfmdnews.com/press/GaAspHEMT/GaAspHEMT.html 2C5366F8-DAF1-4771-B405-8512BAD0DF40-2231-000004B5380CED99-FFA Fri, 22 Jul 2011 11:40:21 -0500 GREENSBORO, N.C., & BOSTON, MA, June 14, 2011 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today unveiled the highly integrated RF6555 ZigBee® front end module (FEM). The RF6555 is RFMD’s newest ZigBee FEM and is optimized for smart energy/advanced metering infrastructure (AMI) applications providing utilities and consumers more control over how they monitor and save energy. ZigBee is a global low power wireless networking standard for monitoring and control across a variety of applications, including energy management, safety and security, home automation, lighting, and electrical appliances. http://www.rfmdnews.com/press/RF6555-EM357/RF6555-EM357.html 2766446D-3C09-4735-A9D2-DFF7BFAB3B7E-38582-0006AE87AF31795A-FFA Wed, 22 Jun 2011 10:28:58 -0500 Baltimore, MD., June 7, 2011 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has qualified its GaN1 power semiconductor process technology for 65V operation. The high reliability power semiconductor process technology supports RFMD’s GaN-based power semiconductor product designs and is also available to foundry customers through RFMD’s Foundry Services business unit. Previously, RFMD’s GaN1 power semiconductor process technology had been qualified for 48V operation. The increase in operating voltage from 48V to 65V enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and civilian radar applications. http://www.rfmdnews.com/press/RFMD65V/RFMD65V.html 93770924-706B-46CE-9225-6291163B4FE3-45735-0003050F677A7E88-FFA Fri, 10 Jun 2011 12:10:21 -0500 Greensboro, N.C., June 2, 2011– RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the release of two new voltage controlled attenuators (VCAs), the RFSA2013 and RFSA2023. The new VCA components, which operate from 5V and 3V supplies, respectively, cover a wideband frequency range of 50 to 4000MHz and satisfy a wide range of applications across end markets. http://www.rfmdnews.com/press/RFSA2013-2023/RFSA2013-2023.html F44AE1D5-6DA5-4532-9547-5FE7E30AAE1B-28612-0002B0273DC9D47E-FFA Thu, 09 Jun 2011 10:14:28 -0500 Greensboro, N.C., June 2, 2011 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has surpassed over two million in cumulative shipments of its Multi-Chip Modules (MCMs) supporting 3G base station transceiver (BST) applications for the wireless infrastructure end market. http://www.rfmdnews.com/press/MCMMilestone/MCMMilestone.html 86486ED7-3FFA-453D-A407-D3970DC16C36-12906-00026189BF0E377A-FFA Wed, 08 Jun 2011 10:13:52 -0500 Greensboro, N.C., May 31, 2011– RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has extended its portfolio of broadband components to include two new low power IQ Modulators featuring integrated fractional-N synthesizers and voltage controlled oscillators (VCO). http://www.rfmdnews.com/press/IQModulators/IQModulators.html B0E87476-BDB8-4DB4-8B31-0B410B6BA23D-96341-00020FE6AFBD9EDC-FFA Tue, 07 Jun 2011 09:18:00 -0500 GREENSBORO , N.C., and Dresden, Germany, March 31, 2011– RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has teamed with Atmel Corporation (Nasdaq: ATML), a leader in microcontroller and touch solutions, to deliver ZigBee® solutions for a broad range of smart energy applications. http://www.rfmdnews.com/press/RF6575/RF6575.html EFBC60F1-9A6E-444E-86C3-69B71F7B8B9E-25352-0002D2ED64197BC3-FFA Wed, 06 Apr 2011 13:36:58 -0500 Greensboro, NC, March 29, 2011 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Compound Semiconductor magazine has recognized the Company’s PowerSmart™ power platform (RFRD6460) as the compound semiconductor industry’s most innovative device of 2011. The award was presented on March 22, 2011, by Compound Semiconductor magazine during the 2011 CS Industry Awards in Frankfurt, Germany. http://www.rfmdnews.com/press/PowerSmartMostInnovative/PowerSmartMostInnovative.html F8F5869A-3D92-48D6-BCA3-2731F73B467C-98212-00023B61B302E588-FFA Mon, 04 Apr 2011 15:20:20 -0500 Greensboro, N.C. March 8, 2011– RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of its industry-leading 5GHz WiFi product portfolio to include two new 5GHz high-band WiFi front end modules (FEMs) with integrated power amplifiers (PAs). The two new 5GHz FEMs – the RF5506, and the RF5516 -- deliver industry-leading high power and high linearity and are optimized for the rapidly growing smartphone and tablet markets. http://www.rfmdnews.com/press/RFMD5GHz/RFMD5GHz.html AED22AC3-06AB-4981-BEE6-27D83FD02040-81796-0001D8065669D701-FFA Mon, 14 Mar 2011 12:11:32 -0500 Barcelona, Spain, February 16, 2011 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that global smartphone and tablet manufacturers designing around the WiLink™ 6.0 and WiLink 7.0 platforms from Texas Instruments Incorporated (TI) (NYSE: TXN) can integrate RFMD’s RF3482 to gain reliable, flexible WiFi connectivity. Volume shipments of the RF3482 have begun, and RFMD estimates shipments will increase in support of key cellular and consumer device manufacturers. http://www.rfmdnews.com/press/RF3482/RF3482.html ADAA2A2B-A53A-444F-B0D7-F7480ECA6AB4-5796-00001990C2D9562F-FFA Tue, 22 Feb 2011 16:53:05 -0600 Barcelona, Spain, February 15, 2011 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the addition of four new products to RFMD’s expanding portfolio of front end modules for 3G/4G switch and signal conditioning applications. http://www.rfmdnews.com/press/3G4GSwitch/3G4GSwitch.html 6CF09D59-3BB4-4E96-9543-84BFDB86D0E3-4156-000010AD95D6D80E-FFA Tue, 22 Feb 2011 14:10:13 -0600 Barcelona, Spain, February 15, 2011 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Samsung has selected RFMD's PowerSmart™ power platforms and WiFi components to enable a broad portfolio of next-generation 3G/4G devices. The highly anticipated Galaxy S 2 and Galaxy Tab 10.1 will both feature RFMD's PowerSmart, while the Galaxy Tab 10.1 will also feature RFMD’s RF5521 WiFi front end module (FEM). The Galaxy S 2 and Galaxy Tab 10.1 were unveiled Sunday by Samsung at the 2011 Mobile World Congress in Barcelona. http://www.rfmdnews.com/press/PowerSmartSamsung/PowerSmartSamsung.html E1B1520B-9EF6-409D-9CB1-38B6978A4187-2977-00000A4433C14B59-FFA Tue, 22 Feb 2011 12:12:43 -0600 Barcelona, Spain, February 14, 2011 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of the Company's 3G product portfolio to include a complete power platform for entry-level 3G handsets. The RF323x power platform, comprised of the RF323x and RF72xx product families, provides handset manufacturers a complete reference design for the implementation of multi-region multimode 3G handset platforms. http://www.rfmdnews.com/press/RF323x/RF323x.html 1CE0B235-6ACB-4F7C-8E89-E0F116C36110-66361-00017AEB60C989FE-FFA Mon, 21 Feb 2011 10:41:17 -0600 Barcelona, Spain, February 14, 2011 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced availability of the Company's RF724x family of HSPA+ power amplifiers. RFMD's RF724x power amplifiers are ultra-high efficiency, single-mode 3G/4G components that reset the bar for performance in smartphones, tablets, and other high-performance data-centric connected devices. http://www.rfmdnews.com/press/RF724x/RF724x.html FCA4C10E-FD00-4A5D-861A-FAF8F8445142-28610-00009E3F1100016F-FFA Fri, 18 Feb 2011 15:17:32 -0600 GREENSBORO, N.C., Jan. 26, 2011 -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has received its first volume production orders for its PowerSmart™ power platforms. The production orders are in support of a highly anticipated smartphone and tablet product family to be launched by a leading cellular handset manufacturer beginning in the March, 2011, quarter. http://www.rfmdnews.com/press/PowersmartShipments/PowersmartShipment.html 9FB08E99-790E-4B8B-9779-048FF5F8CA82-32269-00053CC78D0E8401-FFA Fri, 04 Feb 2011 10:48:42 -0600 Greensboro, NC, January 10, 2011 -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has achieved a major performance milestone related to its PowerSmart™ power platforms. RFMD’s PowerSmart power platforms are a new product category reshaping the future of multimode, multi-band cellular RF architectures. http://www.rfmdnews.com/press/4GPerformanceMilestone/4GPerformanceMilestone.html F21DE652-D8F5-4F66-92D2-4047B690F06D-22206-000531B823E1D04C-FFA Fri, 14 Jan 2011 10:08:30 -0600 Greensboro, NC, November 10, 2010 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today it has teamed with Freescale Semiconductor to deliver ZigBee® solutions for a broad range of smart grid applications. http://www.rfmdnews.com/press/RF6535SmartEnergy/RF6535SmartEnergy.html 5DEE146F-4CBF-4ABC-B6E1-2AAE6A6FB166-8533-000028FC38143684-FFA Tue, 30 Nov 2010 21:03:31 -0600 Greensboro, NC, November 11, 2010 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today unveiled the RF5632, a 2.3–2.7 GHz power amplifier IC. The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks. http://www.rfmdnews.com/press/RF5632CPEPA/RF5632CPEPA.html 58DF0CB8-86FD-405F-9242-F181A43A5A3C-8463-00002894E95CDF04-FFA Tue, 30 Nov 2010 20:56:05 -0600 GREENSBORO, N.C., Nov 9, 2010 -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. http://www.rfmdnews.com/press/RF3932/RF3932.html D4EE791F-AFD8-49A0-9FC2-26548D81B615-3286-00000B6F1EB37FFD-FFA Mon, 29 Nov 2010 14:57:17 -0600 Greensboro, NC, November 10, 2010 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of the Company's RF component catalog to include two new high linearity differential IF mixers: the RFMX0015 and RFMX1015. Both new products are optimized for operation across a broad range of end markets, including cellular infrastructure, wireless backhaul and other high-performance wireless systems. http://www.rfmdnews.com/press/IFMixers/IFMixers.html 8D80B8EA-F9E6-4088-8E15-3F0B26A131AC-970-000246E37F30EFB5-FFA Tue, 23 Nov 2010 18:40:20 -0600 Greensboro, NC, November 4, 2010 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the launch of its broadband 6-bit digital step attenuator product portfolio, with the availability of the RFSA2614 and the RFSA2624. RFMD's newest high-performance components are optimized for operation across multiple market segments, including 3G/4G/LTE cellular infrastructure, WiMAX, wireless backhaul and other high-performance wireless communications applications. http://www.rfmdnews.com/press/Attenuators/Attenuators.html 694BD80A-011E-4A38-A401-B208FEB84F96-3913-0000147B22C5E46C-FFA Tue, 16 Nov 2010 14:53:58 -0600 GREENSBORO, N.C., October 27, 2010 — RF Micro Devices (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits. http://www.rfmdnews.com/press/NavyContract/NavyContract.html B7B2F732-C9CE-4C67-8364-D11A16C0D931-75192-0001D8AB03FC8135-FFA Tue, 02 Nov 2010 15:48:35 -0500 Greensboro, NC, October 26, 2010 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced a new family of integrated configurable components for multiple markets. The highly integrated components, comprised of the RFFC207x and RFFC507x product families, perform multiple common RF functions in a reduced footprint while delivering the flexibility necessary to develop radio systems that operate over a wide dynamic range and across a broad range of frequencies and channel bandwidths. http://www.rfmdnews.com/press/RFMDSlice/RFMDSlice.html 6079474F-D020-40B4-8D46-27C84EBA12E4-60665-000186994FEB8375-FFA Mon, 01 Nov 2010 14:44:48 -0500 New Orleans, LA, October 21, 2010– RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of its broadband product portfolio targeting Hybrid Fiber Coax (HFC) transmission network hardware, cable head end, cable hub equipment, and Multi Dwelling Unit/Multiple Tenant Unit (MDU/MTU) equipment. The new broadband products enhance cable operators’ network performance and enable increased bandwidth to support rapidly growing digital-centric services, such as HDTV, 3D HDTV and “mid-split” DOCSIS® networking. http://www.rfmdnews.com/press/RFMDExpandsHFC/RFMDExpandsHFC.html AAE9DB99-ED60-49CD-8961-9205100F534B-98818-00043CC42A8FA01A-FFA Wed, 27 Oct 2010 09:32:13 -0500 New Orleans, LA, October 19, 2010 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption. The RFPD2650 hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes. http://www.rfmdnews.com/press/RFPD2650/RFPD2650.html 8E5F886C-BAA0-4A88-AD35-A8F9DD1FBC22-28338-0002B8B48E118850-FFA Fri, 22 Oct 2010 11:01:09 -0500 Greensboro, NC, October 13, 2010 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Samsung has selected three highly integrated RFMD® components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab™ Android tablet. http://www.rfmdnews.com/press/GalaxyTabAndroid/GalaxyTabAndroid.html 281E2082-BCB4-4537-A23A-592A2DE91F67-69290-000183BAF4CE8B4A-FFA Mon, 18 Oct 2010 12:39:21 -0500 Greensboro, NC, October 7, 2010 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies. http://www.rfmdnews.com/press/RF3934/RF3934.html FE6649CE-7824-41E0-8420-E55AD274F1F3-1648-000002DEE5E4A70A-FFA Wed, 13 Oct 2010 15:07:04 -0500 GREENSBORO, N.C., Sept 30, 2010 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has further expanded its Foundry Services to deliver multiple molecular beam epitaxial (MBE) platforms, epitaxial characterization and epitaxial development structures, including specialty and high-volume, arsenic- and phosphorus-based processes. http://www.rfmdnews.com/press/FoundryMBE/FoundryMBE.html 4CCDBBA4-B165-45A1-8191-BF6B49BEA2FC-15456-0000584157583B4D-FFA Fri, 08 Oct 2010 14:12:19 -0500 Paris, France, September 28, 2010 -- RF Micro Devices (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the introduction of the RFUV5945A during the European Microwave Week (EuMW) 2010 Conference. The RFUV5945A I/Q up-converter is the newest addition to RFMD’s rapidly growing portfolio of innovative components for microwave and millimeter wave radio applications. It is ideally suited for a variety of end markets, including point-to-point microwave radio, military radio, VSAT, and test and measurement. http://www.rfmdnews.com/press/RFUV5945A/RFUV5945A.html 9D0B772A-2703-432A-A306-A460B21220F3-15552-0002721303BF8C82-FFA Thu, 07 Oct 2010 08:55:33 -0500 GREENSBORO, N.C., September 29, 2010 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has added its world-class Gallium Arsenide (GaAs) technology to RFMD’s foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit. http://www.rfmdnews.com/press/FoundryExpansion/FoundryExpansion.html 39CAF9D5-9058-4AE8-97B5-6359EDBCF7A5-4126-0002332E36C7E8F0-FFA Wed, 06 Oct 2010 13:42:53 -0500 Greensboro, North Carolina (USA) — April 8, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the introduction of the ML2730, a single-chip fully integrated Frequency Shift Keyed (FSK) transceiver with integrated power amplifier (PA) and low noise amplifier (LNA). The ML2730 expands RFMD's portfolio of ISM band single-chip transceivers, covering 900 MHz, 2.4GHz and 5.8GHz http://www.rfmdnews.com/press/ML2730/ML2730.html 6B0E8662-B77B-4CF3-B72E-E3FF926B34D9-9852-0000ABF85B012B44-FFA Mon, 12 Apr 2010 12:33:27 -0400 GREENSBORO, NORTH CAROLINA, and BOSTON, MASSACHUSETTS (USA) — March 23, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today it is teaming with Ember Corporation to introduce ZigBee® front end modules (FEMs) for smart grid applications that give utilities and consumers more control over how they monitor and save energy. ZigBee is a global wireless networking standard for monitoring and control in a variety of applications such as energy management, safety and security, lighting and appliances. http://www.rfmdnews.com/press/Ember/Ember.html 3D33E120-7B3B-433B-ACE9-05DA9A48636A-15791-000042B1907A519B-FFA Tue, 30 Mar 2010 12:25:16 -0400 BARCELONA, SPAIN — February, 17, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has expanded its industry-leading 3G front end product portfolio with the RF7234, RFMD's second-generation TD-SCDMA power amplifier (PA). The dual-mode RF7234 (TD-SCDMA and WCDMA band 1) follows RFMD's first-generation TD-SCDMA PA, the RF3266, which has secured multiple design wins across leading TD-SCDMA reference designs and is forecast to support multiple top-tier handset manufacturers headquartered in Asia and Europe. http://www.rfmdnews.com/press/RF3266-RF7234/RF3266-RF7234.html 8795FD06-3D61-45EF-AC53-79E47DA979A4-3868-00000E40C36B26AA-FFA Mon, 01 Mar 2010 11:15:23 -0500 BARCELONA, SPAIN — February 16, 2010 — RF Micro Devices (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that the Company has successfully qualified and released its first high power RF CMOS switch using high-resistivity silicon substrates sourced at a leading silicon foundry. RFMD® is leveraging this new process technology, as well as patent-pending design and circuit-related technology developed by RFMD, to introduce a product portfolio of high-performance silicon switch-based products for next-generation 3G and 4G smartphones, as well as other cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense applications. http://www.rfmdnews.com/press/RF1603-RF1604/RF1603-RF1604.html 87A1B494-3D42-43FB-9E73-650107AB170F-3868-00000E3BEB871AB2-FFA Mon, 01 Mar 2010 11:15:10 -0500 BARCELONA, SPAIN — February 17, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today introduced the RF7178 – the cellular industry's first front end module to integrate a quad-band, class 12-compliant GSM/GPRS power amplifier, a pHEMT antenna switch and receive SAW filters. http://www.rfmdnews.com/press/RF7177-78/RF7177-78.html 2AB38EA7-B77A-4182-B6E5-B461D5734B5D-3868-00000E3771907F63-FFA Mon, 01 Mar 2010 11:14:49 -0500 BARCELONA, SPAIN — February, 16, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the addition of four new products to RFMD's portfolio of 3G transmit modules. http://www.rfmdnews.com/press/RF3230/RF3230.html 60D226E2-1A4A-4A8E-B5A1-8D2B75F30DFD-24247-000070CAEF4D0F1A-FFA Thu, 25 Feb 2010 18:04:44 -0500 BARCELONA, SPAIN — February 16, 2020 — RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components and semiconductor technologies, today introduced three new products – the RF7170, RF7171, and RF7172, expanding RFMD's industry-leading family of dual- and quad-band GSM/GPRS transmit modules. http://www.rfmdnews.com/press/71xx-expansion/71xx-expansion.html E10607A2-302F-4F8C-9226-F689FCB13066-24247-000070C6760F91D9-FFA Thu, 25 Feb 2010 18:04:26 -0500 BARCELONA, SPAIN — February 15, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has commenced high-volume production of its RF720x WCDMA/HSPA+ power amplifiers (PAs). RFMD's RF720x product family is comprised of seven high performance PAs designed for smartphones and 3G devices implementing mode-specific, band-specific front end architectures. The RF720x product family accommodates all major WCDMA/HSPA+ bands and band combinations and is optimized to mate with reference designs from Qualcomm as well as other leading open market 3G chipset suppliers. http://www.rfmdnews.com/press/RF72xx/RF72xx.html A4574B45-F526-4B0F-B709-ADC2FA380516-21070-000064901AE4CBD4-FFA Tue, 23 Feb 2010 14:52:41 -0500 BARCELONA, SPAIN — February 15, 2010 — RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today introduced PowerSmart™ power platforms, a new product category designed to reshape the future of multimode, multi-band cellular RF architectures. RFMD's PowerSmart™ platforms feature a revolutionary new RF Configurable Power Core™, which leverages industry-leading functional efficiency and delivers state-of-the-art processing of all known cellular communications modulation schemes, including GSM/GPRS, EDGE, EDGE Evolution, CDMA, 3G (TD-SCDMA or WCDMA/HSPA+) and 4G (LTE or WiMAX). With PowerSmart™, RFMD is enabling a new generation of global smartphones and mobile nternet devices requiring three or more bands of 3G or 4G. http://www.rfmdnews.com/press/PowerSmart/PowerSmart.html 2C613E84-B0D9-453C-A2F9-DC00B99C4098-7549-0000207894CFB63D-FFA Mon, 22 Feb 2010 18:04:46 -0500 Cambridge, UK, and Greensboro, North Carolina (USA) - February 1, 2010 - Nujira and RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that they will be demonstrating the world's most efficient broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona, February 2010. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators. http://www.rfmdnews.com/press/Nujira/Nujira.html 07C844FB-616F-40BA-9A07-302ECDD812FF-8135-00001FBE6F0FCC59-FFA Mon, 08 Feb 2010 18:09:12 -0500 GREENSBORO, NORTH CAROLINA - November 12, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order is for RFMD's RFG1M09180 180-watt GaN broadband power transistor (BPT) and is in support of the global expansion of 4G wireless networks. http://www.rfmdnews.com/press/RFG1M09180/RFG1M09180.html 6E7627E5-4353-49C7-A92D-8185FCED3B6F-20008-00006CD82AD213A8-FFA Wed, 18 Nov 2009 17:00:07 -0500 GREENSBORO, NORTH CAROLINA - November 11, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced that RFMD® has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF products are released by RFMD for mass production. Shipments of the RF3931 have commenced to multiple high power amplifier (HPA) manufacturers, and RFMD anticipates GaN shipments will increase significantly as new GaN products are introduced. http://www.rfmdnews.com/press/RF3931/RF3931.html 6D3F3CAC-C684-4A23-918A-ABA828646073-3270-000012DEEACD77CD-FFA Tue, 17 Nov 2009 13:31:21 -0500 DENVER, COLORADO - October 29, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today introduced a portfolio of push-pull amplifiers designed for multiple CATV infrastructure applications. The CGA/CGR product portfolio includes the CGA-1518Z and CGA-7718Z amplifiers for forward path, downstream applications and the CGR-0118Z and CGR-0218Z amplifiers for return path, upstream applications. http://www.rfmdnews.com/press/CGA-1518Z/CGA-1518Z.html 609DB7BA-1045-46A6-B366-CAA38A00FD3C-72534-0001753FB25F060D-FFA Mon, 02 Nov 2009 11:31:11 -0500 DENVER, COLORADO - October 28, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today announced the introduction of the RFFC0085 frequency converter integrated circuit (IC). The CMOS-based RFFC0085 frequency converter IC is designed for use as an Out-of-Band (OOB) receive circuit tuner in cable industry and SATCOM-DBS set-top boxes, DOCSIS® Set-Top Gateways, OpenCable Application Platform (OCAP™) CableCards, Tru2Way™ products and CableCard-equipped HDTVs. http://www.rfmdnews.com/press/RFFC0085/RFFC0085.html 7F048128-6871-45F1-A821-DAAE689B6037-72534-0001753C63F6A532-FFA Mon, 02 Nov 2009 11:30:52 -0500 DENVER, COLORADO - October 27, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today released the industry's first "green" gallium nitride (GaN) based CATV amplifier modules. The D10040200PL1 and D10040230PL1 are designed for use as power doubler amplifiers in current and next generation CATV infrastructure applications. http://www.rfmdnews.com/press/D10040200PL1/D10040200PL1.html 84699F2B-7372-4ABF-B195-8BC33FD0FE11-72534-00017537B8CD22C9-FFA Mon, 02 Nov 2009 11:30:37 -0500 BOSTON, MA - IEEE MTT-S, June 10, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the expansion of the Company's RF component portfolio to include four new high isolation broadband switches: the RF3021, RF3023, RF3024 and RF3025. Each of the symmetric RF switches is designed to operate in multiple market segments, including cellular infrastructure, WiFi, WiMAX and antenna tuning applications for mobile devices. http://www.rfmdnews.com/press/RF3021-25/RF3021-25.html AC190645-6EA1-4159-BF80-331E7DBDA605-12441-0000B486FF4E6650-FFA Tue, 16 Jun 2009 16:45:57 -0400 BOSTON, MA - IEEE MTT-S, June 11, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the expansion of the Company's WiFi product portfolio to include four new switch and switch/LNA products: the RF5500, RF5501, RF5510 and RF5511. The new family of front end solutions is designed to address the need for high performance and continued size reductions in mobile WiFi applications, including cellular handsets, personal navigation devices (PNDs), digital cameras and MP3 players. http://www.rfmdnews.com/press/RF55xx/RF55xx.html 2A67EC45-039A-4764-A349-5FD73242AE9A-12441-0000B4832C2EEBCC-FFA Tue, 16 Jun 2009 16:45:38 -0400 BOSTON, MA - IEEE MTT-S, June 10, 2009 - RF Micro Devices, Inc. (Nasdaq GS:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the Company has formed a gallium nitride (GaN) Foundry Services business unit to supply high-reliability, high-performance and price-competitive GaN semiconductor technology into multiple RF power markets. The RFMD GaN Foundry Services business unit will leverage the Company’s industry leadership in gallium arsenide (GaAs) manufacturing capacity and cycle times, as well as a range of new customer services, to drive shorter time-to-market and minimize time between initial wafer order and final delivery. http://www.rfmdnews.com/press/GaNFoundryServices/GaNFoundryServices.html 38E7738F-3E37-42FA-B8EB-BC8E0687E2FD-12441-0000B47B3DF93C32-FFA Tue, 16 Jun 2009 16:45:22 -0400 BOSTON (IEEE MTT-S) - June 9, 2009 - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today introduced the RF5602 high-power, high-efficiency and high-linearity power amplifier (PA). The RF5602 is a 2 GHz linear PA designed for medium power applications including consumer premises equipment (CPE) and access point (AP) applications for WiFi and WiMAX. http://www.rfmdnews.com/press/RF5602/RF5602.html 276301C7-DEC4-4349-BF28-FEA1AAB37FED-3071-000012ECE9C45946-FFA Fri, 12 Jun 2009 13:52:01 -0400 GREENSBORO, NORTH CAROLINA - May 7, 2009 - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the addition of two new products to the Company's extensive portfolio of broadband transmission products. The two newly released products are RFMD's D10040300GTH hybrid power doubler amplifier module and OS10040320PW optical receiver module. Both are designed for current- and next-generation CATV infrastructure applications. http://www.rfmdnews.com/press/r-090507/r-090507.html F608998B-A5EF-45E5-B87D-1C4162FD3F0C-3538-000013A439D6BA69-FFA Thu, 07 May 2009 16:03:09 -0400 BARCELONA, SPAIN - February 18, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the Company’s entry into the market for cellular switch filter modules. RFMD’s first available switch filter modules (SFMs), the RF1194 and the RF1195, are designed for use in multi-band, multimode 3G handsets. Both SFMs leverage RFMD’s leadership in 3G front ends, as well as RFMD’s proven GaAs manufacturing expertise, high volume cellular switch technology and filter integration capabilities demonstrated in RFMD’s POLARIS® radio solutions. http://www.rfmdnews.com/press/r-021809-2/r-021809-2.html D1C53A49-B6C1-408A-A846-33A51D37191B-19987-000069D9A68EEB32-FFA Thu, 26 Feb 2009 14:31:03 -0500 ARCELONA, SPAIN - February 18, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the Company’s RF7168 dual-band GSM/GPRS transmit module (TxM) has been selected to support multiple MediaTek GSM/GPRS handset platforms based on MediaTek’s MT6139 and Othello®-G transceivers. MediaTek is a leading provider of GSM/GPRS cellular platforms and accounts for the majority of GSM/GPRS handsets produced by handset manufacturers in China. http://www.rfmdnews.com/press/r-021809-1/r-021809-1.html 37DD1F1E-6150-4C1C-91EA-14F555B6DED4-19987-000069D54B38E880-FFA Thu, 26 Feb 2009 14:30:48 -0500 BARCELONA, SPAIN - February 17, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced it is targeting the CDMA components market with the introduction of multiple compelling new CDMA front end products. In calendar year 2009, RFMD® plans a major refresh of its CDMA product portfolio, marking the Company’s first new offerings for CDMA handsets in approximately five years. http://www.rfmdnews.com/press/r-021709-2/r-021709-2.html C835E7C5-3E29-4C78-9959-293FF4171489-19987-000069D17A0A1822-FFA Thu, 26 Feb 2009 14:30:30 -0500 BARCELONA, SPAIN - February 17, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today released the RF720x family of WCDMA/HSPA+ power amplifiers (PAs). RFMD’s RF720x product family is comprised of four PAs designed for 3G multimode devices implementing mode-specific, band-specific front end architectures. The RF720x product family accommodates all major WCDMA/HSPA+ bands and band combinations and is optimized to mate with reference designs from the industry’s leading open market 3G chipset supplier. http://www.rfmdnews.com/press/r-021709-1/r-021709-1.html D7170D36-F4C1-4DFF-9983-7B3592A5C27A-19987-000069CEB6C28169-FFA Thu, 26 Feb 2009 14:30:12 -0500 GREENSBORO, NORTH CAROLINA - February 16, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today introduced the RF716x family of dual-band (EGSM900/DCS1800 or GSM850/PCS1900) GSM/GPRS transmit modules. The RF716x product family is designed to meet the front end requirements of emerging markets handsets, including reduced solution size, improved efficiency and robust ESD protection, while satisfying the need for quality, reliability and reduced handset bill-of-material (BOM) costs. http://www.rfmdnews.com/press/r-021609-3/r-021609-3.html EC50049B-0938-4D3D-883D-8864DC9251E9-3834-00001B8E665929D9-FFA Wed, 25 Feb 2009 14:36:15 -0500 BARCELONA, SPAIN - February 16, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the expansion of the Company’s Wi-Fi product portfolio to include three new front end modules (FEMs): the RF5325, RF5345 and RF5725. The highly integrated FEMs are designed to address the need for high performance and continued size reductions in mobile Wi-Fi applications, including handsets, personal navigation devices (PNDs), digital cameras and MP3 players. http://www.rfmdnews.com/press/r-021609-2/r-021609-2.html 8B4C49E5-95E5-4AAB-AFB3-91DE98705414-3834-00001B8B8EAA51E6-FFA Wed, 25 Feb 2009 14:36:01 -0500 BARCELONA, SPAIN - February 16, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today introduced the RF6460, RFMD’s most highly integrated and scalable 3G/4G cellular front end platform. The RF6460 front end platform features an ultra-compact "converged" multi-band, multimode architecture (2G/2.5G/3G/4G) that delivers best-in-class efficiency, eases implementation, shrinks solution size and reduces component placements, versus mode-specific and band-specific architectures. http://www.rfmdnews.com/press/r-021609-1/r-021609-1.html C3D2F155-F451-4CE8-AB0C-35C5F3E7C7DE-3834-00001B877CBBF6D9-FFA Wed, 25 Feb 2009 14:35:50 -0500 GREENSBORO, NORTH CAROLINA - January 20, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today released the industry’s first fully integrated 5.8 GHz transmitter to comply with China’s electronic toll collection (ETC) standard: "GB/T 20851.1-2007: Electronic Toll Collection – Dedicated Short Range Communication (DSRC) Part 1: Physical Layer." RFMD’s ML5830 is a low-power, amplitude shift key (ASK) and frequency shift key (FSK) transmitter operating in the 5.8 GHz ISM band. It is designed for electronic toll collection applications, including on board units (OBUs) and road side units (RSUs). http://www.rfmdnews.com/press/r-ML5830/r-ML5830.html B5300850-A7EB-4AB7-8249-5CDB0A17D6BC-31270-0003788B9A4C4E50-FFA Tue, 20 Jan 2009 08:15:14 -0500 NEW YORK, NEW YORK - November 11, 2008 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, announced, in conjunction with its fourth annual Analyst Day, that it has broadened its portfolio of 3G front ends for the open market with the release of two new WCDMA/HSDPA power amplifiers (PAs) – the RF3267 and the RF6266. The newly introduced, highly integrated WCDMA/HSDPA PAs are designed to support the critical needs of next-generation, multi-band, multimode 3G handsets and smartphones. Based upon current customer forecasts and design activity, RFMD anticipates volume shipments of the RF3267 and RF6266 to commence in the current quarter. http://www.rfmdnews.com/press/RF3267-RF6266/RF3267-RF6266.html 79913A5C-FCC3-49C2-9F07-703DB201E976-75782-00021F60E3D1A451-FFA Fri, 21 Nov 2008 15:51:27 -0500 GREENSBORO, NORTH CAROLINA - September 25, 2008 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced it has captured design wins on more than 10 upcoming Samsung 3G handsets, supporting Samsung’s anticipated growth in 3G handset sales. Based upon current customer forecasts, RFMD® anticipates volume shipments to commence in the December 2008 quarter and accelerate into calendar 2009. http://www.rfmdnews.com/press/Samsung/Samsung.html 70A93217-C24F-45F2-9A40-63685120DD87-1140-000005CEEB6FD309-FFA Wed, 01 Oct 2008 11:26:20 -0400 BARCELONA, SPAIN - February 19, 2008 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions, today announced the introduction of the RF4180 PowerStar® dual-band GSM/GPRS transmit module. RFMD’s RF4180 is designed to reduce front end complexity and address the price and performance requirements of today’s emerging market handsets. http://www.rfmdnews.com/press/RF4180/RF4180.html C52BC134-BA4F-40FB-BF24-D688EFE0E1D7-6376-0000DE020B2E2194-FFA Tue, 19 Feb 2008 12:58:33 -0500 ARCELONA, SPAIN - February 19, 2008 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions, today announced the introduction of its patent pending MicroShield™ Integrated RF Shielding technology. RFMD’s MicroShield Integrated RF Shielding technology can eliminate the need for bulky and costly external shields by integrating RF shielding directly into the RFIC or module. http://www.rfmdnews.com/press/MicroShield/MicroShield.html BE61C59C-9498-4DF2-9CB6-4B61CB7D9A63-6376-0000DDFCA3FC9B96-FFA Tue, 19 Feb 2008 12:58:05 -0500 BARCELONA, SPAIN - February 19, 2008 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions, today announced the introduction of the RF8000 series of location solutions for global positioning system (GPS) applications. RFMD’s highly integrated, low power RF8000 series of location solutions features software-based, system-on-chip (SoC) architectures and is designed specifically for energy-sensitive mobile devices enabling location-based services. http://www.rfmdnews.com/press/LocationSolutions/LocationSolutions.html D1C07506-54F9-428B-88ED-BA014550A07C-6376-0000DDF7A6581B4B-FFA Tue, 19 Feb 2008 12:57:42 -0500 BARCELONA, SPAIN - February 19, 2008 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions, today announced general market availability of the RF6280 3G transmit system, a flexible 3G multi-mode solution designed to simplify and accelerate implementation of multi-band and multi-mode 3G handsets and mobile device platforms. http://www.rfmdnews.com/press/3GTransmitSystems/3GTransmitSystems.html 4A00202E-61AD-4CE7-96B8-A66E6D946FC1-6376-0000DDF157BA11DF-FFA Tue, 19 Feb 2008 12:57:08 -0500 GREENSBORO, NORTH CAROLINA - December 11, 2007 - RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today announced it is supporting the ramp of Huawei's U120E 3G multi-mode (UMTS/EDGE) handset with its RF3161 quad-band large signal polar modulation (LSPM) EDGE power amplifier (PA) module. http://www.rfmdnews.com/press/Huawei/Huawei.html AFB2B613-E3C8-4842-BA03-0FFA704B3030-4765-0000251ECCC60240-FFA Fri, 08 Feb 2008 18:12:33 -0500 NEW YORK, NEW YORK – NOVEMBER 21, 2007 – RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, will announce at its analyst day today the introduction of new technologies developed by RFMD to enable unprecedented levels of functional integration in RF applications. http://www.rfmdnews.com/press/RFTechLeader/RFTechLeader.html 921B2323-FCB0-4C94-950C-81A5FC528005-4765-0000251FE5E6EE15-FFA Fri, 08 Feb 2008 18:12:38 -0500 NEW YORK, NEW YORK – NOVEMBER 21, 2007 – RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, announced at its analyst day today that its newly formed Multi-Market Products Group (MPG) will add a wide range of RF switch products to its industry-leading Standard RF Components product portfolio. http://www.rfmdnews.com/press/MPG-RFSwitches/MPG-RFSwitches.html FB360DDA-E045-4ADD-B503-05070E668A05-4765-000025214A95567F-FFA Fri, 08 Feb 2008 18:12:44 -0500 NEW YORK, NEW YORK – NOVEMBER 21, 2007 – RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, announced at its analyst day today the introduction of its proprietary micro-electro-mechanical systems, or MEMS, technology for RF and other applications. http://www.rfmdnews.com/press/MEMS/MEMS.html 8D536B09-DA6A-4FFF-8708-5818512BF862-4765-000025229BBCBCE4-FFA Fri, 08 Feb 2008 18:12:49 -0500 NEW YORK, NEW YORK – NOVEMBER 21, 2007 – RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, announced at its analyst day today it has completed the technical qualification of its first generation 48V Gallium Nitride (GaN) process technology. http://www.rfmdnews.com/press/GaN-Qualification/GaN-Qualification.html 63E2852D-6EF4-48C2-89E1-A645FEE33B32-4765-00002523A6B02083-FFA Fri, 08 Feb 2008 18:12:54 -0500 NEW YORK, NEW YORK – NOVEMBER 21, 2007 – RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, announced at its analyst day today that it has shipped its 100 millionth POLARIS™ TOTAL RADIO™ RF solution. RFMD is a leading supplier of cellular RF solutions, and the 100 millionth POLARIS RF solution was shipped to a leading handset manufacturer. http://www.rfmdnews.com/press/100MillionthPOLARIS/100MillionthPOLARIS.html 9AAC6F92-EC41-41E8-BE64-EEC4D277360A-4765-0000252517566BE8-FFA Fri, 08 Feb 2008 18:13:00 -0500 GREENSBORO, NORTH CAROLINA – NOVEMBER 20, 2007 – RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today announced the completion of its acquisition of Sirenza Microdevices, Inc. (Nasdaq GM: SMDI), a supplier of radio frequency (RF) components. http://www.rfmdnews.com/press/SirenzaFinal/SirenzaFinal.html 4DD7B3EB-4A9F-4726-B6F8-5B0A1F38DB97-4765-0000252653F83D92-FFA Fri, 08 Feb 2008 18:13:05 -0500 GREENSBORO, NORTH CAROLINA - NOVEMBER 20, 2007 - RF Micro Devices, Inc. (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, announced today the establishment of the Multi-Market Products Group (MPG), following RFMD's successful completion of the acquisition of Sirenza Microdevices Inc., which was announced yesterday. http://www.rfmdnews.com/press/MPG-Launch/MPG-Launch.html 9F207332-EC4B-47A8-95FF-EB25ABCA938D-4765-000025277FDEF360-FFA Fri, 08 Feb 2008 18:13:10 -0500 GREENSBORO, NORTH CAROLINA - October 3, 2007 - RF Micro Devices, (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced plans to expand its compound semiconductor manufacturing capacity to support growth expectations in the Company's Cellular and Multi-Market product groups. http://www.rfmdnews.com/press/FabExpansion/FabExpansion.html 3B7D431B-C8D6-49E9-BBB1-B8C6F9512197-4765-00002528ED19826C-FFA Fri, 08 Feb 2008 18:13:16 -0500 GREENSBORO, NORTH CAROLINA and BROOMFIELD, COLORADO -- August 20, 2007 -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, and Sirenza Microdevices (Nasdaq GM: SMDI), a supplier of radio frequency (RF) components, today announced they have signed a definitive merger agreement. http://www.rfmdnews.com/press/Sirenza/Sirenza.html 09BA41AF-ED8D-4355-9C35-F1921413FF20-4765-0000252A1352A5B5-FFA Fri, 08 Feb 2008 18:13:21 -0500 GREENSBORO, NORTH CAROLINA – August 1, 2007 – RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that Gartner, Inc. has identified RFMD as the world's number-one supplier of select RF devices, based on global revenue of $933 million for 2006. RFMD advanced one position, compared to its previous ranking as the number-two supplier in Gartner's prior year report. http://www.rfmdnews.com/press/TopRank07/TopRank07.html 1810B452-744C-4B32-94E3-84AF982A27D0-4765-0000252B17B17009-FFA Fri, 08 Feb 2008 18:13:26 -0500 GREENSBORO, NORTH CAROLINA – July 26, 2007 – RF Micro Devices, (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has shipped its 100 millionth WCDMA cellular front end. RFMD is the wireless industry’s first company to ship 100 million WCDMA front ends for 3G handsets. RFMD attributes the industry milestone to continued strong sales of 3G multimode handsets and to the Company’s leading market share in WCDMA cellular front ends. http://www.rfmdnews.com/press/100MillionthWCDMA/100MillionthWCDMA.html 90CD097A-7B32-4A98-9E68-1991ACFF491C-4765-0000252C2CA8F80B-FFA Fri, 08 Feb 2008 18:13:30 -0500 GREENSBORO, NORTH CAROLINA - July 26, 2007 - RF Micro Devices, (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has commenced volume production of its POLARIS™ 3 TOTAL RADIO™ RF system solution to support customer orders. http://www.rfmdnews.com/press/P3Production/P3Production.html E48D24F9-1BA9-42FA-ABC2-398365F243B1-4765-0000252D3DFAAAC6-FFA Fri, 08 Feb 2008 18:13:35 -0500 GREENSBORO, NORTH CAROLINA - JULY 19, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced a major expansion at its Beijing, China, facility. The expansion includes increased assembly capacity and the addition of new advanced capabilities. The expansion is expected to support RFMD's POLARIS™ 3 RF solution, which is currently scheduled to ramp production in the current quarter. http://www.rfmdnews.com/press/Beijing/Beijing.html EDA986EE-831F-498C-A4D3-CDA23319D3CE-4765-0000252E4E8C282B-FFA Fri, 08 Feb 2008 18:13:40 -0500 GREENSBORO, NORTH CAROLINA - June 29, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that Gartner Dataquest has identified RFMD as the world's sixth largest global wireless communications semiconductor vendor, based on revenue. RFMD advanced one position, compared to its previous ranking as the number-seven vendor in Gartner's prior year report. http://www.rfmdnews.com/press/GartnerRank07/GartnerRank07.html 7C014F69-D86C-4BB6-898B-91BE864B8FB4-4765-0000252FA33DF402-FFA Fri, 08 Feb 2008 18:13:45 -0500 HONOLULU, HI, JUNE 14, 2007 (IEEE MTT-S) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction of the RF393X family of 48V gallium nitride (GaN) power transistors. The RF393X product family offers power performance from 10W to 120W and very wide tunable bandwidth--demonstrating the superior combination of high power and bandwidth offered by RFMD's GaN technology versus competing GaAs and silicon LDMOS technologies. http://www.rfmdnews.com/press/RF393X/RF393X.html 0BD67303-6EC0-498E-9691-838A95EAB27C-4765-00002530D2EC3830-FFA Fri, 08 Feb 2008 18:13:50 -0500 HONOLULU, HI, JUNE 14, 2007 - (IEEE MTT-S) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the availability of the RF386X family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs). http://www.rfmdnews.com/press/RF386X/RF386X.html BF14838F-7EE0-4EB9-842E-1DEB639DEF69-4765-0000253209DDE454-FFA Fri, 08 Feb 2008 18:13:56 -0500 HONOLULU, HI, JUNE 11, 2007 - (IEEE MTT-S) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it has commenced shipments of its gallium nitride (GaN) RF3822 PowerIC broadband power amplifier (PA) to a top-tier military supplier. RFMD's RF3822 PowerIC delivers power performance over a frequency range of 0.1GHz to 1GHz and is ideally suited for multiple-band and broadband applications, such as software-defined radios (SDRs) for military communications. http://www.rfmdnews.com/press/RF3822/RF3822.html 69986A6F-4D48-42FE-8D1B-2E8F18D4084C-4765-00002533251F2F99-FFA Fri, 08 Feb 2008 18:14:00 -0500 HONOLULU, HI, JUNE 7, 2007 - (IEEE MTT-S) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it will showcase its new portfolio of GaAs pHEMT low noise amplifiers (LNAs) for wireless infrastructure and provide a demonstration of its GaN high power products for commercial and military applications at the IEEE MTT-S International Microwave Symposium 2007, June 5-7, in Honolulu, Hawaii. http://www.rfmdnews.com/press/IEEEshowcase07/IEEEshowcase07.html 1EF02029-021F-452B-80A2-067508E5A954-4765-0000253436D0C1CB-FFA Fri, 08 Feb 2008 18:14:05 -0500 GREENSBORO, NORTH CAROLINA - MAY 21, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that its RF3159 quad-band linear EDGE power amplifier (PA) module is supporting Samsung's E250 EDGE handset. http://www.rfmdnews.com/press/SamsungE250/SamsungE250.html E5BC4BFB-6022-49F9-8916-CC9E7394407E-4765-00002535E5672541-FFA Fri, 08 Feb 2008 18:14:12 -0500 GREENSBORO, NORTH CAROLINA - April 27, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the addition of a research and development (R&D) center in the Company's Shanghai facility. Located in Shanghai's Zhanjiang High-Tech Park, the addition of this R&D center underscores the Company's continued growth in the world's largest market for handheld devices. http://www.rfmdnews.com/press/RFMD-ShanghaiRD/ShanghaiRD.html 0E076F97-66EA-4929-84BD-C55CCDED9518-4765-0000253AF9F29317-FFA Fri, 08 Feb 2008 18:14:34 -0500 ORLANDO, FLORIDA - APRIL 2, 2007 - (CTIA WIRELESS) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction of the RF3198 dual-band power amplifier (PA) module. The RF3198 PowerStar™ PA module provides ease of implementation and optimized performance to manufacturers of dual-band handsets for the growing entry level and replacement markets. http://www.rfmdnews.com/press/RF3198/RF3198.html 23D5A3D4-3339-4E7D-81C4-BA648A20D587-4765-0000253C7397D277-FFA Fri, 08 Feb 2008 18:14:40 -0500 ORLANDO, FLORIDA - APRIL 2, 2007 - (CTIA WIRELESS) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has extended its base of transceiver customers with shipments of its POLARIS™ TOTAL RADIO™ transceiver to ASUS, a leading Taiwan-based handset manufacturer. http://www.rfmdnews.com/press/ASUS/ASUS.html 96715339-90A6-4264-ABEA-E6D44A8E0F30-4765-0000253E09E2C5FB-FFA Fri, 08 Feb 2008 18:14:47 -0500 ORLANDO, FLORIDA - MARCH 30, 2007 - (CTIA WIRELESS) - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced customer sampling of the RF3161 quad-band EDGE power amplifier module. The RF3161, which leverages RFMD's industry leadership in power amplifiers and large signal polar modulation (LSPM) EDGE transceiver solutions, is designed to support merchant market EDGE transceivers that implement LSPM transmit architectures. http://www.rfmdnews.com/press/RF3161/RF3161.html E058698D-B74B-47D9-B952-E7BD22A34843-4765-0000253F29DC4FD0-FFA Fri, 08 Feb 2008 18:14:52 -0500 BARCELONA, SPAIN - February 14, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the availability of the RF3203 GSM/GPRS/EDGE transmit module, which features new PowerStar® II technology for improvements in total radiated power (TRP) and specific absorption rate (SAR) performance. PowerStar power amplifiers feature the industry's best selling implementation of power control technology. http://www.rfmdnews.com/press/RF3203/RF3203.html 88832730-E633-4870-91E8-DC79B2CF5145-4765-00002540451482C7-FFA Fri, 08 Feb 2008 18:14:57 -0500 BARCELONA, SPAIN - February 14, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction of the RF3196 power amplifier module for GSM/GPRS handsets. The enhanced power control capabilities of the RF3196 provide improved TRP and Specific Absorption Rate (SAR) performance in mobile communication devices. http://www.rfmdnews.com/press/RF3196/RF3196.html 36C3BB6D-1C32-4405-A384-7A98A603D029-4765-00002541BE11E698-FFA Fri, 08 Feb 2008 18:15:03 -0500 BARCELONA, SPAIN - February 14, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced new design wins for its POLARIS™ 2 TOTAL RADIO™ module for multiple EDGE handsets. RFMD's POLARIS 2 and POLARIS 2 Radio Module transceiver solutions are the industry's best selling solutions for EDGE handsets. http://www.rfmdnews.com/press/POLARIS2/POLARIS2.html EB2606D8-7364-4BA8-A57A-43B1A426C2A6-4765-00002542F52FF3AA-FFA Fri, 08 Feb 2008 18:15:08 -0500 GREENSBORO, NORTH CAROLINA - February 14, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced its intention to adopt the DigRF3G radio interface for its upcoming HSDPA/HSUPA/EDGE cellular transceiver solution. http://www.rfmdnews.com/press/DigRF3G/DigRF3G.html C6C117E5-319F-44D3-B0EB-4C579AE0D6E3-4765-0000254422F4DDCA-FFA Fri, 08 Feb 2008 18:15:13 -0500 BARCELONA, SPAIN - February 13, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the RF628x family of products, which combine to provide a UMTS transmit system for the implementation of multi-region multimode 3G handset platforms. http://www.rfmdnews.com/press/TransmitSystem/TransmitSystem.html 3892625E-E65A-4826-928F-1D7C18111B69-4765-00002545E873EF4C-FFA Fri, 08 Feb 2008 18:15:21 -0500 GREENSBORO, NORTH CAROLINA - February 13, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction of a breakthrough new self shielding technology for RF circuits. http://www.rfmdnews.com/press/Shielding/Shielding.html E21322A6-CDB0-4036-8BF7-48F26F1E9A46-4765-0000254723A7E88B-FFA Fri, 08 Feb 2008 18:15:26 -0500 BARCELONA, SPAIN - February 13, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it will showcase its POLARIS™ 3 TOTAL RADIO™ solution at the 3GSM World Congress in Barcelona. http://www.rfmdnews.com/press/POLARIS3/POLARIS3.html 17A6DE38-7D9C-417D-8C4A-0AB339A5A352-4765-0000254822C8645B-FFA Fri, 08 Feb 2008 18:15:30 -0500 BARCELONA, SPAIN - February 13, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction of two new low noise, high efficiency DC to DC converters for mobile communication devices: the RF9003 and RF6280. http://www.rfmdnews.com/press/DCDCconverters/DCDCconverters.html 0D2E2E24-D680-4683-9433-76C9EF6718A7-4765-0000254957B549BA-FFA Fri, 08 Feb 2008 18:15:36 -0500 GREENSBORO, NORTH CAROLINA - February 12, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today introduced a portfolio of complementary cellular components designed to address the increasing complexity of cellular front-ends in multimode 3G handsets. http://www.rfmdnews.com/press/3GComponents/3GComponents.html F35016D9-22C7-4121-BE03-EDBCD5D3D06E-4765-0000254AEBB780A1-FFA Fri, 08 Feb 2008 18:15:42 -0500 GREENSBORO, NORTH CAROLINA - February 9, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has extended its leadership in front-end solutions with the availability of multiple new cellular power amplifiers, transmit modules and front-end modules targeting all tiers of GSM/GPRS/EDGE and 3G multimode handsets. http://www.rfmdnews.com/press/Portfolio3GSM/Portfolio3GSM.html 0E83D595-9488-4A5D-8E05-1CE9FBD5A604-4765-0000254C4B854004-FFA Fri, 08 Feb 2008 18:15:48 -0500 GREENSBORO, NORTH CAROLINA - January 29, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it has received its first purchase order from a top-tier military supplier for a new product using RFMD's gallium nitride (GaN) high electron mobility transistor (HEMT) process technology. RFMD's GaN technology can operate over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications. The purchase order is the first received by RFMD for its GaN power amplifiers. http://www.rfmdnews.com/press/RF3825/RF3825.html DE9CF215-1613-4F79-86C1-8884034BC952-4765-000025519768C548-FFA Fri, 08 Feb 2008 18:16:11 -0500 LONG BEACH, CALIFORNIA - January 16, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it will showcase its newest RF switches - the RF1200 and RF1450 - at the IEEE Radio and Wireless conference in Long Beach, California, January 9-11 in booth 513. http://www.rfmdnews.com/press/RFMD-RF1200-1450/RFMD-RF1200-1450.html 10DD5816-AA64-4979-8382-8D8AAC77535A-4765-000025532EA31FA0-FFA Fri, 08 Feb 2008 18:16:18 -0500 GREENSBORO, NORTH CAROLINA - January 15, 2007 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that its RF3159 linear EDGE power amplifier (PA) is supporting Samsung's SGH-D900 "Black Carbon" mobile phone, the thinnest slider phone in the world. http://www.rfmdnews.com/press/RFMD-RF3159Samsung/RFMD-RF3159Samsung.html B728AA10-7D51-4BE1-BB70-2603696ACCA3-4765-000025543E746F37-FFA Fri, 08 Feb 2008 18:16:22 -0500 GREENSBORO, NORTH CAROLINA - December 14, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the official opening of its new customer support center in Shanghai, China. The new facility underscores RFMD's growing presence in Greater China and the company's commitment to expansion in the world's largest market for cellular handsets. http://www.rfmdnews.com/press/RFMD-ShanghaiOffice/RFMD-ShanghaiOffice.html 068B04EB-4964-49E5-A0D2-B95AA8E3E065-4765-00002555660925C2-FFA Fri, 08 Feb 2008 18:16:27 -0500 GREENSBORO, NORTH CAROLINA (RFMD ANALYST DAY) - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today reiterated its financial guidance for its fiscal 2007 third quarter, ending December 31, 2006, which it originally provided in RFMD's quarterly earnings announcement and accompanying conference call on October 24, 2006. http://www.rfmdnews.com/press/RFMD-Reiteration/RFMD-Reiteration.html AF6E34A5-30CA-45FE-8145-0E00D1F9B910-4765-00002556EA35BDD8-FFA Fri, 08 Feb 2008 18:16:34 -0500 GREENSBORO, NORTH CAROLINA - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the availability of samples of the RF8110 scalable GPS solution - a software/host based GPS solution. http://www.rfmdnews.com/press/RFMD-RF8110/RFMD-RF8110.html 664E9AB5-55C5-48A8-BCA0-5E0FAC30CC7C-4765-00002558E78368F5-FFA Fri, 08 Feb 2008 18:16:42 -0500 NEW YORK, NEW YORK (RFMD ANALYST DAY EVENT) - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that an existing POLARIS customer has commenced production of a new high volume EDGE handset enabled by RFMD's POLARIS™ Radio Module for EDGE solution. http://www.rfmdnews.com/press/RFMD-P2REdge/RFMD-P2REdge.html F281851E-0328-4D27-BFC1-5C2584B17486-4765-0000255A0F9F2093-FFA Fri, 08 Feb 2008 18:16:47 -0500 NEW YORK, NEW YORK (RFMD ANALYST DAY EVENT) - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications, which drive mobile communications, today announced that Bob Bruggeworth, RFMD President and CEO, will ring The NASDAQ Stock Market Closing Bell, November 17 at 4pm (ET). RFMD is celebrating the shipment of its 50 millionth POLARIS™ RF solution. http://www.rfmdnews.com/press/RFMD-NASDAQ/RFMD-NASDAQ.html 60BA8D82-1279-44F4-B56F-7899C19988BC-4765-0000255B465DF5E8-FFA Fri, 08 Feb 2008 18:16:53 -0500 GREENSBORO, NORTH CAROLINA - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced a collaboration with MediaTek, Inc., a global leader in consumer and communications IC solutions, to create Bluetooth® enabled EDGE and GPRS mobile phone reference designs with RFMD's SiW3500. http://www.rfmdnews.com/press/RFMD-Mediatek/RFMD-Mediatek.html B7F30DC4-83FE-46A0-AA7A-1EB5331C78F1-4765-0000255C53C5BA27-FFA Fri, 08 Feb 2008 18:16:57 -0500 BEIJING, CHINA - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that RFMD has received the "Best Supplier Award" for the second consecutive year from Lenovo Mobile, the leading China-based handset manufacturer. The award was presented at an awards ceremony held earlier today in Xiamen, China. http://www.rfmdnews.com/press/RFMD-Lenovo/RFMD-Lenovo.html 2E762913-3D4F-4BED-B204-4A9689DBAB90-4765-0000255D8F17E526-FFA Fri, 08 Feb 2008 18:17:02 -0500 GREENSBORO, NORTH CAROLINA- November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction and sampling of Gallium Nitride (GaN) wideband power amplifier ICs to Tier 1 WiMAX, cellular base station and Public Mobile Radio (PMR) customers. http://www.rfmdnews.com/press/RFMD-GaNFamily/RFMD-GaNFamily.html 78F39529-D502-40AD-90D2-2502AEB7465F-4765-0000255EA2C76230-FFA Fri, 08 Feb 2008 18:17:07 -0500 NEW YORK, NEW YORK (RFMD ANALYST DAY EVENT) - November 28, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has commenced volume production shipments of its POLARIS™ 2 Total Radio Module for EDGE for GSM/GPRS/EDGE handsets to Amoi Electronics Company Limited, a leading handset manufacturer in China. http://www.rfmdnews.com/press/RFMD-Amoi/RFMD-Amoi.html 7E831C22-1E35-47AF-8A67-CC6385A45B38-4765-0000255FE335D857-FFA Fri, 08 Feb 2008 18:17:12 -0500 GREENSBORO, NORTH CAROLINA - September 29, 2006 - RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that, as a result of the pending merger of Jazz Semiconductor with a wholly owned subsidiary of Acquicor Technology, Inc. (AMEX: AQR), RFMD expects to sell its equity interest in Jazz Semiconductor for an aggregate cash consideration of approximately $24-$27 million. http://www.rfmdnews.com/press/RFMD-AcquicorJazz/RFMD-AcquicorJazz.html 294825C4-AD82-4C64-AD0E-46CCC6B01544-4765-0000256137253A67-FFA Fri, 08 Feb 2008 18:17:18 -0500 GREENSBORO, NORTH CAROLINA - August 3, 2006 - RFMD® (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that the Company has commenced mass production shipments of its RF3159 linear EDGE power amplifier (PA) to Samsung Electronics for use in at least 15 EDGE-enabled handsets. These shipments extend RFMD's industry leadership in EDGE PAs and support RFMD's continued growth in EDGE as Samsung rapidly expands its EDGE product offerings. http://www.ezwire.com/cust/rfmd/RFMD-Samsung/RFMD-Samsung.html 8F7E76D0-0465-4FBD-B31C-A6E442150AA1-4765-00002562D2BAC937-FFA Fri, 08 Feb 2008 18:17:25 -0500 GREENSBORO, NORTH CAROLINA (USA) - July 12, 2006 - RFMD® (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that its two-placement linear EDGE chipset and Bluetooth® system-on-chip (SoC) solution support a recently announced, EDGE-enabled mobile device, powered by Danger, Inc. and manufactured by Sharp Corporation. http://www.ezwire.com/cust/rfmd/RFMD-SharpDanger/RFMD-SharpDanger.html 66E58BCC-BB42-4E94-AF20-089D6EA7554C-4765-000025647D7F89DB-FFA Fri, 08 Feb 2008 18:17:32 -0500 SAN FRANCISCO, CALIFORNIA (IEEE MTT-S IMS 2006) - June 14, 2006 - RFMD® (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has started pre-production sampling of five new Gallium Arsenide (GaAS) pHEMT low noise amplifiers (LNAs) for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards. These LNA products are currently sampling to key cellular infrastructure and WiMAX base station OEM customers and are targeted for production release in September 2006. http://www.ezwire.com/cust/rfmd/RFMD-LNA/RFMD-LNA.html 60E642F0-A1EE-4167-9573-30E080C271DA-4765-00002565F6A73624-FFA Fri, 08 Feb 2008 18:17:39 -0500 AN FRANCISCO, CALIFORNIA (IEEE MTT-S IMS 2006) - June 14, 2006 - RFMD® (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today introduced a family of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistors and is sampling to top-tier cellular infrastructure and WiMAX base station customers. The sampling of these transistors represents the achievement of a baseline 0.5um GaN high-power transistor process by RFMD. http://www.ezwire.com/cust/rfmd/RFMD-GaNSampling/RFMD-GaNSampling.html 888A0ED9-49C1-4909-90F1-389D6DEC42D4-4765-000025678B9A7A20-FFA Fri, 08 Feb 2008 18:17:45 -0500 Beijing, China - June 8, 2006 - RFMD® (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, announced today that it has assembled its 100 millionth module in its Beijing, China, assembly facility. The Company attributes the assembly milestone to continued strong sales of its industry-leading portfolio of cellular power amplifiers. http://www.ezwire.com/cust/rfmd/RFMD-100millionth/RFMD-100millionth.html D675E690-B2D7-4FF8-BE68-811C5DDA05B1-4765-000025691AAF1338-FFA Fri, 08 Feb 2008 18:17:52 -0500 Las Vegas, Nevada (CTIA Wireless 2006) - April 10, 2006 - RFMD® (NASDAQ: RFMD), a leading provider of proprietary radio frequency integrated circuits (RFICs) for wireless communications applications, today announced that its industry-leading POLARIS(TM) 2 TOTAL RADIO(TM) solutions have been recognized for product excellence by top electronics industry publications Portable Design, EDN China and Wireless Design & Development. http://www.ezwire.com/cust/rfmd/RFMD-POLARISAwards/RFMD-POLARISAwards.html 4B43C0B2-3530-4330-B4B9-96D0D86D69DD-4765-0000256A1606D91E-FFA Fri, 08 Feb 2008 18:17:56 -0500